KVR1333D3N9/2G
2GB 256M x 64-Bit PC3-10600
CL9 240-Pin DIMM
JEDEC standard 1.5V 0.075V Power Supply
VDDQ = 1.5V 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1
clock
Programmable CAS Write Latency(CWL) = 9(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit,
sequential with starting address 000 only), 4 with
tCCD = 4
which does not allow seamless read or write [either
on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self
calibration through ZQ pin (RZQ : 240 ohm 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE
85C, 3.9us at 85C < TCASE . 95C
Asynchronous Reset
1066Mbps CL7 doesnt have backward compatibility
with 800Mbps CL5
PCB : Height 1.180 (30.00mm), double sided
component
Desempeo:
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)
90ns
Row Active Time (tRASmin) 36ns (min.)
Power TBD W (operating)
UL Rating 94 V - 0
Operating Temperature 0oC to 85oC
Storage Temperature -55oC to +100oC